Description of Round W Tungsten Sputter Target

Circular‑form tungsten sputter targets are widely used in standard magnetron chambers for metallic thin‑film deposition. The circular working surface brings specific manufacturing risks; inconsistent grain distribution may create uneven racetrack erosion during operation. This causes fluctuating deposition rates and shortens target lifespan, interfering with repeatability for material‑science and semiconductor‑oriented experiments. Our round W tungsten sputter target is processed with carefully controlled powder metallurgy to achieve homogeneous grain structure across the full circular face. It delivers dense, reliable tungsten thin‑films for barrier layers, high‑temperature protective coatings and various laboratory R‑D projects. Each target completes dimensional validation and surface defect screening before leaving our facility. Fully compatible with mainstream circular magnetron cathodes for lab and pilot environments. Optimised internal microstructure mitigates uneven wear, supporting steady deposition cycles and consistent thin‑film performance for your precision coating development.

Features of Round W Tungsten Sputter Target

1. Round tungsten target for sputter guns  

2. High-purity W for quality thin films  

3. Excellent thermal stability for plasma  

4. Ideal for semiconductor barrier layers  

5. Dense microstructure for uniform erosion  

6. Low impurity for device-grade coatings  

7. Suitable for DC magnetron sputtering 

8. Custom diameters for standard systems  

9. Supplied with full purity certification 

10. Vacuum-sealed for oxidation protection

Applications of Round W Tungsten Sputter Target

Semiconductors and Microelectronics: Tungsten layers are integral components of thin-film transistors (TFTs) in TFT-LCD screens and serve as diffusion barriers and conductive interconnects in the microelectronics industry, frequently utilized in contact hole processes for logic devices and memory chips.

Thin-Film Deposition Quality: High-purity targets enable the deposition of thin films with excellent conductivity and minimal particulate contamination during PVD processes, thereby preventing circuit shorts or damage.

Specifications of Round W Tungsten Sputter Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular/Tube

Bonding: Unbonding/Bonding

Purity: 2N(99%), 3N(99.9%), 3N5(99.95%).

Detection method: Metal elements are usually analyzed by GDMS or ICP-OES, while gas elements are analyzed by LECO.