Description of Rectangular 3N5 Hf Hafnium Target

3N5 high‑purity hafnium is valued for its outstanding thermal stability and chemical resistance, yet rectangular large‑format targets bring real manufacturing challenges. Impurity clusters or uneven grain distribution across the surface can trigger non‑uniform erosion, creating inconsistent thin‑film performance across your substrate batch. Our rectangular 3N5 hafnium target is manufactured with strict purity control and homogeneous grain structure throughout the whole piece. It yields low‑contamination hafnium thin‑films suited for semiconductor barrier applications, high‑temperature protective coatings and cutting‑edge material‑science investigations. Every target undergoes dimensional verification, purity spot‑checks and surface finishing inspection before dispatch. Engineered to fit standard rectangular sputtering cathodes for both laboratory and pilot production setups. Consistent material characteristics reduce film‑thickness deviation over extended sputtering cycles, supporting reliable and reproducible results for your high‑demand thin‑film development projects.

Features of Rectangular 3N5 Hf Hafnium Target

1. 3N5 hafnium for high‑purity deposition  

2. Rectangular format for large‑area coating  

3. Excellent thermal stability for demanding processes  

4. Ideal for semiconductor and optical films  

5. Custom dimensions for inline sputter systems  

6. Low impurities for device‑grade layers  

7. Dense grain structure for uniform erosion  

8. Suitable for DC and RF magnetron  

9. Supplied with full certificate of analysis  

10. Vacuum‑packed to prevent surface oxidation

Applications of Rectangular 3N5 Hf Hafnium Target

Semiconductor manufacturing: Used for depositing hafnium oxide gate dielectric thin films in advanced process nodes and for preparing barrier layers; research into the ferroelectric properties of doped hafnium-based thin films for ferroelectric RAM (FeRAM) is a growing area of interest.

Optical coating: Used for optical lenses, decorative coatings, and more.

Nuclear industry: Hafnium exhibits excellent thermal neutron absorption capabilities.

Plasma cutting: Hafnium wire serves as an electrode emitter, offering superior service life and cut-surface finish compared to traditional materials.

Specifications of Rectangular 3N5 Hf Hafnium Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 2N(99%), 3N(99.9%), 3N5(99.95%), 4N(99.99%).

Key Manufacturing Process Points

Due to their highly similar chemical properties, hafnium and zirconium invariably coexist in nature, making their separation extremely difficult. Producing high-purity hafnium targets requires multi-stage electron-beam melting to remove impurities, followed by multi-directional forging and precision annealing to control grain orientation; this results in a fine, equiaxed grain structure (approximately 50 μm) that ensures sputtering uniformity.