Description of Pure W Tungsten Circular Sputtering Target

Our Pure W Tungsten Circular Sputtering Target is designed for advanced thin-film deposition processes where purity, consistency, and process stability matter most. Manufactured from high-purity tungsten with controlled composition and uniform structure, it supports reliable sputtering performance for semiconductor, photovoltaic, optical coating, and precision electronics applications. Unlike standard tungsten targets that focus solely on purity ratings, our Pure W Tungsten Circular Sputtering Target is engineered to address real production challenges — including film uniformity, target utilization, particle control, and downtime reduction. Its excellent thermal conductivity and stable sputtering behavior help maintain consistent deposition quality even during long production cycles. Available in customized dimensions and specifications, this tungsten sputtering target offers manufacturers a practical solution to improve yield and reduce process interruptions. Whether used for barrier layers, conductive films, or protective coatings, it delivers the dependable performance required in demanding industrial environments. With strict quality control throughout manufacturing, every target is built to support repeatable results and long-term production efficiency.

Applications of Pure W Tungsten Circular Sputtering Target

Semiconductor manufacturing: used for gate electrodes, connection wiring, contact hole filling, and diffusion barrier layers in chips, directly affecting the film quality and yield of advanced processes.

Display panel: Used for tungsten layer deposition of thin-film transistors in TFT-LCD screens, with extremely stable performance under high-temperature environments.

Other fields: covering industries such as aerospace, electric light sources, medical equipment, metallurgical machinery, chemical equipment, etc. that require high-temperature coating.

Specifications of Pure W Tungsten Circular Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 3N5 (99.95%)

⚠️  Precautions

Pure tungsten is usually brittle and difficult to process, but high-purity tungsten can maintain hardness and have sufficient ductility for processing.

The purity of the target material directly affects the conductivity and particle defects of the thin film. High-purity target materials can achieve more uniform film layers and faster sputtering rates.

Tungsten target materials have relatively poor conductivity and are inferior to titanium or copper target materials in applications that require high conductivity, and their preparation costs are relatively high. ‌‌