Pure Co Cobalt Sputter Target
Pure Co Cobalt Sputter Target
Pure Co Cobalt Sputter Target
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Pure Co Cobalt Sputter Target

Description of Pure Co Cobalt Sputter Target

Our Pure Co Cobalt Sputter Target solves common frustrations caused by inferior cobalt sources, such as trace impurity contamination, uneven grain distribution, and drifting sputter rates that compromise magnetic‑film test data. Strict raw‑material purification and optimized forming processes yield a uniform microstructure with minimal residual contaminants, securing stable sputtering behaviour throughout each deposition cycle. Consistent material homogeneity helps you achieve repeatable magnetic properties across thin‑film samples, avoiding misleading experimental deviations. This target fits well for magnetic material research, semiconductor thin‑film layers, and spintronics‑related lab and pilot‑scale production. We provide a wide range of standard dimensions, with backing‑plate bonding service available for straightforward chamber mounting. Custom sizes can also be arranged to match your existing equipment. Rather than wasting valuable lab time debugging flawed film outputs, rely on this high‑quality cobalt target to stabilise your workflow and keep your research progress on track. 

Production Process of Pure Co Cobalt Sputter Target

The production process of high-purity cobalt target material mainly includes: selecting high-quality raw materials such as electrolytic cobalt or reduced cobalt, making powder by ball milling or spray drying, forming by cold pressing or hot pressing, then high-temperature sintering to increase density, finally surface treatment such as grinding and polishing, and testing and packaging. Research has shown that annealing at 300-422 ° C after cold working (below 422 ° C) can significantly increase the machinable deformation of materials and improve sputtering efficiency and material utilization by controlling grain orientation.

Features of Pure Co Cobalt Sputter Target

1. Pure cobalt for high-performance thin films  

2. Excellent magnetic properties for data storage  

3. Dense target for stable sputter rates  

4. Ideal for hard disk and sensor layers  

5. Custom sizes for R&D and production  

6. Low impurity for device-grade quality 

7. Suitable for DC and RF magnetron  

8. Supplied with purity analysis certificate  

9. Vacuum-sealed to prevent oxidation  

10. Reliable performance for magnetic coatings

Applications of Pure Co Cobalt Sputter Target

Semiconductor manufacturing: used for chip interconnect layers, barrier/contact layers, and wafer thin film deposition, especially at 7nm and below extreme nodes; cobalt targets with lower resistivity and more stable performance are accelerating their appearance.

Magnetic storage devices: used as magnetic recording layers for hard disk drives, high-purity cobalt films have excellent magnetic properties such as high magnetic permeability and stable hysteresis loops.

Optoelectronics and Display: Used for thin film preparation of solar cells, OLED panels, touch screens, and optical lenses.

Aerospace and Automotive: Used for coating engine components and electric vehicle battery coatings to enhance wear resistance and thermal stability.

Specifications of Pure Co Cobalt Sputter Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 2N(99%), 3N5(99.95%), 4N(99.99%).

⚠️  Selection Focus

When selecting cobalt target materials, it is important to pay attention to purity grade, size specifications (commonly 2-6 inch circular targets), grain uniformity, surface roughness (sputtering surface Ra ≤ 0.8 μ m), and the supplier's supporting service capabilities. The microstructure of the target material has a significant impact on sputtering rate and film quality, and an ideal equiaxed fine-grain structure (grain size 10-50 microns) can effectively improve sputtering efficiency and film uniformity. ‌‌

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