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Mg Magnesium Sputtering Target
Description of Mg Magnesium Sputtering Target
Magnesium sputtering targets bring unique deposition advantages, yet low‑melting‑point magnesium is sensitive to thermal spikes that can harm film uniformity. Our Mg targets are produced from tightly controlled high‑purity feedstock with consistent microstructure, minimising internal impurities that cause uneven sputtering output. These metallic sources deliver decent sputter yield, forming thin magnesium films widely used for semiconductor diffusion barriers, photovoltaic layers and functional protective coatings. Every target undergoes strict dimensional checks and surface quality assessment before dispatch. We supply standard and custom‑sized units to fit small‑scale lab trials and pilot‑line coating runs. Stable material consistency helps you achieve predictable thin‑film results, supporting reliable performance across optoelectronic, energy‑related and advanced material‑development projects.
Features of Mg Magnesium Sputtering Target
1. High-purity magnesium for thin-film deposition
2. Excellent adhesion to various substrates
3. Ideal for optical and electronic coatings
4. Custom sizes and shapes available
5. Dense microstructure for uniform sputtering
6. Low gas content for reduced arcing
7. Suitable for DC and RF magnetron
8. Supplied with purity analysis certificate
9. Vacuum-packed for oxidation prevention
10. Quick turnaround for urgent orders
Applications of Mg Magnesium Sputtering Target
Magnesium Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Magnesium Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Technical Specifications of Mg Magnesium Sputtering Target
| Molecular Weight | 24.31 |
| Appearance | Gray |
| Boiling Point | 1090 °C |
| Density | 1738 kg/m3 |
| Melting Point | 649 °C |
| Electrical Resistivity | 4.45 microhm-cm @ 20°C |
| Electronegativity | 1.2 Paulings |
| Latent heat of evaporation ( J g⁻¹ ) | 5254 |
| Heat of Vaporization | 32.517 K-Cal/gm atom at 1090°C |
| Temperature coefficient ( K⁻¹ ) | 0.00425 @0-100°C |
| Thermal emf against Pt (cold 0C - hot 100C) ( mV ) | 0.44 |
| Bulk modulus ( GPa ) ( Hard ) | 35.6 |
| Bulk modulus ( GPa ) ( Soft ) | 35.6 |
| Hardness - Vickers ( kgf mm⁻² ) ( Hard ) | 35 - 45 |
| Hardness - Vickers ( kgf mm⁻² ) ( Soft ) | 30 - 35 |
| Material condition | Hard |
| Material condition | Soft |
| Poisson's ratio ( Hard ) | 0.291 |
| Poisson's ratio ( Soft ) | 0.291 |
| Tensile modulus ( GPa ) ( Hard ) | 44.7 |
| Tensile modulus ( GPa ) ( Soft ) | 44.7 |
| Tensile strength ( MPa ) ( Hard ) | 232 |
| Tensile strength ( MPa ) ( Soft ) | 185 |
| Yield strength ( MPa ) ( Hard ) | 100 |
| Yield strength ( MPa ) ( Soft ) | 69 |
| Coefficient of thermal expansion ( x10⁻⁶ K⁻¹ ) | 26.000 @0-100°C |
| Latent heat of evaporation ( J g⁻¹ ) | 5254 |
| Latent heat of fusion ( J g⁻¹ ) | 362 |
| Melting point ( C ) | 649 |
| Specific heat ( J K⁻¹ kg⁻¹ ) | 1020.0 @25°C |
| Thermal conductivity ( W m⁻¹ K⁻¹ ) | 156.00 @0-100°C |
Specifications of Mg Magnesium Sputtering Target
Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”
Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”
Thickness: 0.125”, 0.25”
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Purity: 2N(99%), 3N5(99.95%), 4N(99.99%), 4N5(99.995%),5N(99.999%).6N(99.9999%).
Manufacturing Process of Mg Magnesium Sputtering Target
• Refining
Three-layer electrolytic process
• Melting and casting
Electrical resistance furnace - Semi-continuous casting
• Grain refinement
Thermomechanical treatment
• Cleaning and final packaging - Cleaned for use in vacuum
Protection from environmental contaminants
Protection during shipment
