Description of 4N Fe Iron Sputtering Target

Our 4N Fe Iron Sputtering Target solves common practical hurdles researchers face with low‑grade iron sources. High residual impurities and erratic grain distribution often cause sputtering‑rate swings, poor film uniformity, and skewed magnetic test results that derail your experimental workflows. Carefully selected high‑purity feedstock paired with optimized forming and thermal treatment produces uniform grain architecture across the target body. It keeps impurity contaminants to a minimum and delivers steady sputtering behaviour run after run. This target suits magnetic material investigations, alloy‑film preparation and semiconductor‑related lab‑scale development work. Each batch goes through thorough quality inspection to guarantee consistent performance. Various standard dimensions are accessible, and backing‑plate bonding is available for convenient chamber mounting. Custom‑built sizes and shapes can be made to match special‑purpose equipment. Reduce unnecessary trial‑and‑error from defective iron films, and devote more of your lab capacity to moving your R&D projects forward efficiently. 

Features of 4N Fe Iron Sputtering Target

1. 4N iron for high-purity thin films  

2. Excellent magnetic properties for devices  

3. Dense target for stable deposition  

4. Ideal for magnetic recording layers  

5. Custom sizes for R&D systems  

6. Low impurity for consistent performance  

7. Suitable for DC and RF magnetron  

8. Supplied with purity analysis certificate  

9. Vacuum-sealed for oxidation prevention  

10. Reliable quality for advanced research

Applications of 4N Fe Iron Sputtering Target

Thin films sputtered from high-purity iron target materials are mainly used for the preparation of magnetic recording media, magnetic recording heads, optoelectronic devices, and magnetic sensors. ‌‌

Magnetic storage and spintronics: Iron thin films are the core functional layers of devices such as giant magnetoresistance (GMR) multilayers and magnetic random access memory (MRAM), directly affecting data read and write performance.

Semiconductors and Microelectronics: Can be used for copper interconnect barrier layers (such as FeN, FeTaN), electrode materials, etc., and can also be used for coating in fields such as solar photovoltaics and flat displays.

Research and Basic Research: Suitable for various single-target and multi-target sputtering systems, commonly used in materials science research, micro-nano processing, and device fabrication.

Specifications of 4N Fe Iron Sputtering Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 4N(99.99%).

⚠️  Process Difficulty: Challenges brought by strong magnetism

There is a prominent difficulty in magnetron sputtering of iron target material: because it is a strong magnetic material, it will shield the magnetic field on the surface of the target material (i.e., the "ferromagnetic target position" problem), resulting in a decrease in surface magnetic field strength and sputtering efficiency. ‌‌

Generally, it is necessary to increase the strength of the magnetic field source, optimize the target material design, and reduce the magnetic permeability in order to ensure normal sputtering.

The industry also pays special attention to the penetrating magnetic flux (PTF) of the target material. If the PTF is too low, it can lead to difficulties in arc initiation, slow sputtering rate, and even deformation or burning through of the target material.

Therefore, high-purity iron target materials usually require uniform and fine grains, no internal pores, and extremely low impurity content to ensure film quality and process stability. ‌‌