Description of ZrO2+2%Ti Sputtering Target

Zirconia‑titanium composite sputtering targets serve as key sources for high‑performance dielectric optical coatings. Uncontrolled powder blending or uneven sintering can trigger phase segregation across the target body. This causes random arcing and shifting refractive index values, bringing inconsistent film performance that complicates repeatable optical‑layer development for laboratories and pilot projects. Our ZrO₂+2%Ti sputtering target is manufactured with precise powder proportioning and carefully optimised sintering cycles. Uniform phase distribution runs through the entire target, delivering stable‑quality dielectric thin‑films suited for anti‑reflection multilayers and optoelectronic component research. Each target undergoes compositional confirmation, dimensional measurement and comprehensive surface defect inspection before shipment. Tailored for mainstream RF magnetron sputtering setups. Balanced composite structure effectively lowers arcing probability, enabling steady deposition rates and reliable test‑sample consistency for your high‑spec thin‑film coating development.

Material Composition and Preparation

Matrix material: High-purity ZrO₂ (zirconia) powder is used as the matrix, utilizing its high melting point, high hardness, excellent wear resistance, and corrosion resistance.

Doping element: Adding 2% titanium (Ti) metal to improve the conductivity of the target material, adjust the refractive index of the thin film, or optimize the crystallization performance. The specific mechanism depends on the target material manufacturing process and sputtering parameters.

Preparation process: generally includes high-purity raw material selection → powder ball milling refinement → compression/injection molding → high-temperature sintering → mechanical processing and surface treatment.

Features of ZrO2+2%Ti Sputtering Target

1. Zirconia with 2% titanium doping  

2. High‑k dielectric for advanced devices  

3. Excellent thermal and chemical stability  

4. Ideal for DRAM and gate oxides  

5. Dense ceramic for uniform deposition  

6. Low impurity for device‑grade films 

7. Custom sizes for R&D and production  

8. Suitable for RF magnetron sputtering  

9. Supplied with composition certificate 

10. Vacuum‑sealed for contamination protection

Applications of ZrO2+2%Ti Sputtering Target

Semiconductors and integrated circuits: used for depositing high dielectric constant insulation layers or gate dielectrics to improve transistor performance.

Optical thin films and coatings: Sputtered thin films have high refractive index and hardness, and are used as anti-reflective or protective films for lenses and displays.

Optoelectronics and sensors: Deposition of a zirconia layer on sensor components to improve anti-interference ability and accuracy.

Decoration and protective coating: can prepare interference colors, with high hardness and corrosion resistance, used for surfaces such as watches and mobile phone cases.

Specifications of ZrO2+2%Ti Sputtering Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 2N(99%), 3N5(99.95%), 4N(99.99%).

⚠️  Precautions for Use

Sputtering power: Ceramic brittle target materials are fragile at high power, and it is recommended that the sputtering power not exceed 3W/cm ², and attention should be paid to target material cooling.

Binding process: When using high-purity indium solder for binding, attention should be paid to the melting point of indium, which is about 156 ℃. If the working temperature of the target material exceeds this value, indium will melt.

Specification confirmation: Whether the 2% Ti content is a mass ratio or an atomic ratio, the size of the target material, and the purity level need to be confirmed with the supplier according to specific requirements.