Description of Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputtering Target

This manganese‑modified PZT ceramic target delivers tailored ferroelectric‑piezoelectric performance, specifically tuned to cut leakage current and boost long‑term device stability compared to standard undoped PZT sources. Precise stoichiometry control is critical for this compound; minor compositional drift during sintering can shift thin‑film electrical response and ruin MEMS device characterisation. Our target maintains strict Pb‑excess, Zr‑Ti balance and 1 % Mn doping across the full body. It produces high‑quality functional thin films well‑suited for piezoelectric MEMS actuators, ultrasonic transducers and ferroelectric sensor research. Every unit undergoes thorough compositional validation, density testing and surface inspection before shipment. Suited for RF‑magnetron sputtering within lab‑scale and pilot‑line vacuum systems. Consistent material behaviour helps you obtain repeatable film properties, reducing trial‑and‑error cycles for your advanced piezoelectric component development projects.

Features of Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputtering Target

1. High-purity PZT-based sputtering target  

2. Manganese-doped for enhanced properties  

3. Ideal for piezoelectric thin-film devices  

4. Custom sizes for R&D systems

5. Dense microstructure for stable sputtering  

6. Excellent ferroelectric performance consistency  

7. Low impurity for device-grade films  

8. Suitable for RF magnetron sputtering 

9. Supplied with composition analysis certificate  

10. Vacuum-sealed for oxidation protection

Applications of Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputtering Target

Typical applications for this type of target material involve the fabrication of PZT ferroelectric thin films for use in:

The core capacitive dielectric layer of ferroelectric memory devices (such as FeRAM).

Piezo-MEMS (Piezoelectric Micro-Electro-Mechanical Systems), including piezoelectric ultrasonic transducers, micro-actuators, and sensors.

Other optoelectronic devices requiring piezoelectric or ferroelectric thin films.

Specifications of Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputtering Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 3N5(99.95%), 4N(99.99%), 4N5(99.995%).

Key Parameters and Processing Considerations

‌Purity‌: Such high-purity targets typically reach a purity level of ‌99.99% (4N)‌ to minimize the introduction of impurities that could cause defects (such as charge traps) in the thin film.

‌Preparation Process: Targets are generally produced via ‌solid-state reaction‌ or powder metallurgy (involving mixing, forming, and high-temperature sintering), requiring strict control over density and compositional uniformity.

‌Sputtering and Annealing‌: When using this target for sputtering, the as-deposited film is typically amorphous; annealing at temperatures ‌above 625 °C (e.g., 650 °C) is required to induce crystallization into the perovskite phase and achieve favorable ferroelectric properties. Parameters such as the sputtering atmosphere (e.g., Ar/O₂ ratio) and substrate temperature also significantly influence film quality.