Description of Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputter Target

Manganese‑doped lead‑zirconate‑titanate targets demand exacting compositional control, since minor stoichiometry shifts will alter ferroelectric response and compromise device performance. This lead‑excess PZT formulation integrates manganese doping intended to suppress leakage current and improve long‑term stability for piezoelectric thin‑film systems. Our sputter target maintains consistent elemental distribution throughout the ceramic body, avoiding local compositional deviations that often appear with standard sintered PZT parts. It works well for RF magnetron sputtering to fabricate MEMS actuators, miniature ultrasonic transducers, and ferroelectric sensing elements. Every piece undergoes density verification, compositional spot‑checks, and surface finishing inspection before dispatch. Compatible with research‑scale vacuum chambers and pilot production setups. Stable material behaviour minimises experimental variability, supporting reliable test outcomes as you develop next‑generation piezoelectric micro‑devices.

Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputter Target Composition and Design Rationale

Lead-rich compensation: The "Pb1.1" in the chemical formula indicates a stoichiometric excess of lead of approximately 10%. This compensates for lead volatilization caused by high temperatures during the sputtering process, ensuring the deposited film's chemical composition closely matches the target and maintaining the stability of the perovskite structure.

Zirconium-to-Titanium ratio: The Zr: Ti ratio is 0.51:0.48, placing the composition near the Morphotropic Phase Boundary (MPB) of the PZT system. Compositions near this boundary typically exhibit optimal ferroelectric, piezoelectric, and dielectric properties.

Manganese doping: The inclusion of Mn0.01 (approximately 1%) is primarily intended to enhance film performance. Manganese doping helps reduce leakage current and increase resistivity; it also optimizes ferroelectric domain switching characteristics, thereby improving the film's insulation and fatigue resistance.

Features of Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputter Target

1. High-purity PZT-based sputter target  

2. Manganese-doped for enhanced piezoelectric response  

3. Ideal for ferroelectric thin-film devices  

4. Custom dimensions for R&D sputter guns  

5. Dense microstructure for stable deposition  

6. Excellent dielectric properties for sensors  

7. Low impurity for device-grade coatings  

8. Suitable for RF magnetron sputtering systems  

9. Supplied with detailed compositional analysis  

10. Vacuum-sealed to prevent oxidation

Specifications of Pb1.1(Zr0.51Ti0.48Mn0.01)O3 Sputter Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular/Tube

Bonding: Unbonding/Bonding

Purity: 3N5(99.95%), 4N(99.99%), 4N5(99.995%).