Description of IGZO1:1:1 ratio 4N Sputter Target

IGZO sputter targets with strict 1:1:1 elemental ratio serve as critical sources for oxide‑semiconductor thin‑film transistor development. Even minor impurity contamination or inconsistent phase distribution can shift electrical properties of deposited films, leading to unstable mobility and poor repeatability for high‑sensitivity optoelectronic R‑D work. Our IGZO 1:1:1 ratio 4N sputter target is fabricated from 4N high‑purity raw powders through precise batching and controlled sintering workflows. It maintains uniform phase structure across the target surface, producing high‑quality semiconductor layers for TFT prototyping, flexible electronic devices and optoelectronic component research. Each target undergoes stoichiometry validation, impurity testing and careful surface inspection before shipment. Compatible with standard RF sputtering equipment for laboratories and pilot facilities. Its homogeneous material structure minimises performance deviation during deposition, supporting stable and trustworthy thin‑film outcomes for your advanced device‑development projects.

Features of IGZO1:1:1 ratio 4N Sputter Target

1. 4N IGZO for high-performance displays  

2. 1:1:1 ratio for consistent TFT performance  

3. Excellent mobility for OLED backplanes  

4. Uniform composition for stable sputtering  

5. Ideal for large-area display panels  

6. Custom sizes for R&D and production  

7. Low impurity for device-grade quality  

8. Dense target for uniform deposition  

9. Supplied with purity analysis certificate  

10. Vacuum-sealed for contamination-free use

Applications of IGZO1:1:1 ratio 4N Sputter Target

Core Applications: Serving as the channel layer material, this thin film is critical for manufacturing high-performance thin-film transistors (TFTs) and is widely used in advanced display panels—such as TFT-LCDs and AMOLED/OLEDs—as well as in semiconductor integrated circuits.

Emerging Frontiers: It is also attracting attention in fields such as in-memory computing and flexible displays. IGZO transistors feature ultra-low off-state currents, making them suitable for low-refresh-rate eDRAM designs; additionally, amorphous IGZO is considered a potential technological alternative to traditional 1T1C DRAM.

Specifications of IGZO1:1:1 ratio 4N Sputter Target

Circular Sputtering Targets(Diameter): 1.0"2.0"3.0"4.0" 5.0" 6.0"

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 4N(99.99%)