Description of HfO2 +2%Ti  Sputtering Target

Hafnium‑titanium mixed‑oxide targets are widely used for high‑performance dielectric thin‑films. Poor phase homogeneity during sintering can trigger random arcing and inconsistent sputter rates, leading to uneven layer properties that compromise optical and electrical performance in precision‑oriented R‑D projects. Our HfO₂ +2% Ti sputtering target is sintered using carefully calibrated powder blending and thermal cycles to maintain a uniform phase distribution throughout the target. It delivers stable dielectric thin‑films well suited for optical multilayer coatings and semiconductor‑related component development. Every target undergoes composition verification, dimensional testing, and detailed surface inspection before shipment. Optimized for standard RF magnetron sputtering setups in laboratories and pilot facilities. Balanced material structure suppresses unexpected arcing events, supporting consistent, repeatable deposition results for your high‑spec functional‑film development.

Features of HfO2 +2%Ti  Sputtering Target

1. Hafnium oxide with 2% titanium 

2. Ti‑doped HfO₂ for improved properties  

3. High‑k dielectric for advanced devices  

4. Excellent thermal and chemical stability  

5. Ideal for DRAM and logic chips  

6. Dense target for stable sputtering  

7. Custom sizes for R&D and production  

8. Low impurity for device‑grade films  

9. Supplied with a composition certificate  

10. Vacuum‑sealed for quality protection

Applications of HfO2 +2%Ti  Sputtering Target

Semiconductor Industry: Used in High-k Metal Gate (HKMG) technology to replace traditional SiO₂ gate dielectrics and mitigate leakage current issues in advanced process nodes; also utilized as the dielectric layer in Ferroelectric RAM (FeRAM).

Optical Coatings: Leverages high refractive index and low absorption across a broad spectral range to produce anti-reflective and high-reflectivity coatings for precision optical components, such as laser optics and lithography system lenses.

High-Temperature Protective Coatings: Utilized for wear-resistant and anti-corrosive coatings on high-temperature aerospace components and precision cutting tools, owing to its high hardness and chemical inertness.

Specifications of HfO2 +2%Ti  Sputtering Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 2N(99%), 3N5(99.95%), 4N(99.99%), 4N5(99.995%).

Basic Characteristics of HfO2 +2%Ti  Sputtering Target

Doping Purpose: Pure HfO₂ has extremely poor electrical conductivity (resistivity of approximately 10¹² Ω·cm); doping with Ti allows for the tuning of the film's crystallization temperature and phase structure, thereby improving its electrical properties.

Key Parameters: Typical purity >99.95%, density >9.68 g/cm³, and a melting point of approximately 2758°C.

Key Properties: High dielectric constant (approx. 25 for pure HfO₂), ultra-wide bandgap (5.7 eV), and strong corrosion resistance; additionally, Ti doping enables the modulation of ferroelectric properties.