Description of Ga2O3 Gallium Oxide 99.99% Pure Sputtering Target

Our 99.99% Pure Ga₂O₃ Gallium Oxide Sputtering Target addresses frequent pain points for wide‑bandgap semiconductor research. Many gallium oxide targets suffer from inconsistent phase formation and oxygen deficiency, introducing detrimental defects that degrade thin‑film electronic properties and lead to unreproducible test outcomes. High‑purity starting powder is processed via precision sintering to create dense, evenly structured bulk material. This well‑balanced microstructure minimises impurity intrusion and reduces oxygen‑loss risks during sputtering, yielding stable gallium‑oxide thin‑films ideal for power‑device studies, UV optoelectronics development and lab‑scale material characterisation. Every unit undergoes thorough phase and purity inspection before shipment. A full range of standard sizes is in stock, and backing‑plate bonding supports easy chamber installation. Custom geometries can be manufactured for specialised experimental equipment. Cut down wasted deposition runs from flawed oxide layers, freeing your lab resources to focus on meaningful wide‑bandgap material‑science progress. 

Features of Ga2O3 Gallium Oxide 99.99% Pure Sputtering Target

1. 99.99% pure gallium oxide target  

2. High-purity Ga₂O₃ for power electronics  

3. Excellent wide-bandgap semiconductor material  

4. Dense ceramic for stable sputtering  

5. Ideal for UV photodetector applications  

6. Custom sizes for R&D and production  

7. Low impurity for device-grade films  

8. Suitable for RF magnetron sputtering  

9. Supplied with detailed purity certificate 

10. Vacuum-sealed for contamination protection

Applications of Ga2O3 Gallium Oxide 99.99% Pure Sputtering Target

Power semiconductor: an efficient and low-loss power device used in fields such as fast charging piles for electric vehicles, smart grids, and 5G communication.

Optoelectronic detection: preparation of sun blind ultraviolet detectors, deep ultraviolet LEDs, high-energy radiation detectors, etc.

Extreme environmental devices: high-temperature sensors for aircraft engines (capable of working for over 1000 hours at 1200 ℃), neutron flux monitoring for nuclear reactors, etc.

Specifications of Ga2O3 Gallium Oxide 99.99% Pure Sputtering Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 4N(99.99%).