Description of 99.99% Zinc Oxide Doped with Ga2O3 Sputtering Target

99.99% Zinc Oxide Doped with Ga2O3 Sputtering Target is designed for applications that require high-purity oxide materials, precise composition control, and stable thin-film deposition. By adding a controlled amount of gallium oxide to zinc oxide, this AZO sputtering target provides a reliable material source for transparent conductive films, display technologies, solar cells, and advanced electronic devices. In real manufacturing processes, consistent film performance depends not only on material purity but also on target uniformity and composition stability. This Ga2O3-doped ZnO target is produced with strict quality control to help reduce deposition fluctuations, improve film repeatability, and support more predictable electrical and optical properties. Unlike conventional targets that focus only on basic specifications, this material is developed with practical application needs in mind, including process stability, equipment compatibility, and long-term production reliability. Its high purity and controlled doping level make it suitable for customers developing next-generation transparent conductive oxide (TCO) films. Available in customized dimensions and configurations, 99.99% Zinc Oxide Doped with Ga2O3 Sputtering Target can be adapted to different sputtering systems and project requirements. It offers a dependable solution for researchers and manufacturers seeking consistent quality and better control over advanced oxide thin-film production.

Features of 99.99% Zinc Oxide Doped with Ga2O3 Sputtering Target

Transparent conductivity: Achieving low resistivity while maintaining high transmittance in the visible light range (typically exceeding 80%) is its most prominent characteristic as a TCO material.

Doping synergistic effect: With an atomic radius similar to that of Zn, Ga atoms can effectively incorporate into the ZnO lattice, introducing additional charge carriers and modifying the band structure to enhance electrical conductivity and stability.

High-purity assurance: 4N-grade purity minimizes the risk of impurities acting as charge scattering centers or sources of optical absorption, serving as a prerequisite for obtaining high-performance thin films.

Applications of 99.99% Zinc Oxide Doped with Ga2O3 Sputtering Target

Thin-film solar cells: Serve as a transparent conductive layer to enhance the light absorption path and improve cell efficiency.

Flat-panel display devices: Used to fabricate transparent electrodes for panels such as LCDs and OLEDs.

Ultraviolet optoelectronic devices: Enable the fabrication of UV-transparent conductive films for applications such as UV detectors and light-emitting devices.

Gas sensors: Utilize changes in photoelectric properties to facilitate gas detection.

Specifications of 99.99% Zinc Oxide Doped with Ga2O3 Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 4N(99.99%)

⚠️ Usage Precautions

‌Storage‌: Store in a dry environment and keep the packaging sealed; handle with care to avoid crushing or impact.

‌Handling‌: Ensure the target surface is clean before use; wear clean gloves to prevent contamination from oil or other foreign matter.

‌Process Integration‌: Material properties do not directly equate to final device performance; optimal results require process adaptation, structural design, and system integration.