Description of 99.99% Pure Ga2O3 Gallium Oxide Sputtering Target

Our 99.99% Pure Ga₂O₃ Gallium Oxide Sputtering Target solves typical issues in wide-bandgap semiconductor thin-film development. Many gallium oxide targets have uneven phase distribution and oxygen vacancies, bringing unexpected defects and shifting electrical performance that ruin your device test results. We adopt high-purity raw powder and precision sintering to form a dense, homogeneous target body. Strict impurity control and balanced oxygen content help stabilize sputtering behaviour, delivering consistent Ga₂O₃ films for power semiconductors, UV detectors, and optoelectronic R&D. Each target goes through purity and microstructure inspection before shipment. Standard sizes are ready, and backing plate bonding service is available for reliable chamber operation. Custom shapes and dimensions can also be produced to fit your PVD system. Minimize wasted substrates caused by film defects, and spend more lab time collecting repeatable electrical and optoelectronic data for your semiconductor development. 

Core Manufacturing Process for 99.99% Pure Ga2O3 Gallium Oxide Sputtering Target

High-purity metallic gallium serves as the starting material; purification is achieved through chemical synthesis, multiple crystallization steps, and zone melting to produce 99.99%-grade gallium oxide powder.

Powder preparation and particle size control are conducted in an ultra-clean environment to ensure uniform particle size and freedom from external contamination.

Green bodies are formed using isostatic pressing technology, followed by low-temperature pre-sintering to enhance initial structural strength.

The core process involves high-temperature sintering (exceeding 1000°C) in an oxygen or vacuum atmosphere; atomic diffusion creates a highly dense ceramic body, with process parameters precisely balanced to optimize density, grain size, and crystal orientation.

Features of 99.99% Pure Ga2O3 Gallium Oxide Sputtering Target

99.99% high purity ensures the intrinsic semiconductor properties of deposited thin films, preventing impurities from interfering with carrier concentration and conductivity type.

A highly dense structure significantly reduces particle splashing during sputtering, ensuring stable deposition rates and excellent film uniformity.

Controlled fine grains and low surface roughness facilitate a uniform, stable flux of sputtered atoms, minimizing surface defects in the resulting films.

The material primarily features the stable β-phase crystal structure, ensuring high crystal quality in the subsequently deposited epitaxial films.

Applications of 99.99% Pure Ga2O3 Gallium Oxide Sputtering Target

Power Electronic Devices: Used to fabricate high-voltage, high-efficiency Schottky barrier diodes and field-effect transistors (FETs) suitable for high-voltage, high-power applications such as electric vehicles and photovoltaic inverters.

Solar-Blind UV Detection: Used to produce detector films sensitive to solar-blind UV light (wavelengths <280 nm) while remaining unresponsive to visible light; applications include power grid corona detection and forest fire early warning systems.

High-Temperature Oxygen Sensors: Deposited gallium oxide films enable stable oxygen concentration monitoring at temperatures between 700°C and 1100°C, making them suitable for gas sensing in extreme operating conditions.

Optoelectronics and Optical Coatings: Used to manufacture specialized optoelectronic components such as deep-UV transparent conductive films, UV filters, and dielectric protective layers for solar cells.

Specifications of 99.99% Pure Ga2O3 Gallium Oxide Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 3N5 (99.95%)