Description of 4N Hafnium Oxide HfO2 Sputtering Target

Hafnium oxide is a critical dielectric material widely utilised for high‑k thin‑film applications across semiconductors and optical systems. Even minor purity drops or inconsistent sintered density can trigger arcing during RF sputtering, introducing pinhole defects and degrading the insulating performance of deposited layers. Our 4N hafnium oxide sputtering target is sintered under closely monitored conditions to maintain high purity and consistent bulk density. It delivers low‑defect dielectric films well suited for high‑k gate stacks, anti‑reflection optical coatings and various thin‑film research programmes. Each target undergoes purity verification, density testing and thorough surface inspection before release. Compatible with standard RF magnetron sputtering setups for both laboratory research and pilot‑scale production. Stable material behaviour minimises unexpected discharge events, helping you secure repeatable dielectric properties for your high‑precision component development work.

Features of 4N Hafnium Oxide HfO2 Sputtering Target

1. 4N hafnium oxide for high‑k dielectrics  

2. High‑purity HfO₂ for advanced nodes  

3. Dense ceramic for stable sputter rates 

4. Ideal for gate oxide and DRAM capacitors  

5. Excellent uniformity for optical multilayers  

6. Low impurity for device‑grade thin films  

7. Custom sizes for R&D and production  

8. Suitable for RF magnetron sputtering  

9. Supplied with purity and density certificates  

10. Vacuum‑sealed for moisture protection

Applications of 4N Hafnium Oxide HfO2 Sputtering Target

Semiconductor high-k gate dielectrics: With a dielectric constant of approximately 25, these materials are ideal replacements for traditional SiO₂ in the gate insulation layers of CMOS transistors at the 22nm node and below, effectively suppressing leakage current and enabling continued device scaling.

Microelectronic devices: Also used in the development of insulation layers for novel memory and logic devices, such as ReRAM, FeRAM, and ferroelectric tunnel junctions.

Other fields: Can serve as precursors for producing hafnium metal for nuclear control rods, stabilizers for thermal barrier coatings, and scintillators for medical imaging.

Specifications of 4N Hafnium Oxide HfO2 Sputtering Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 2N(99%), 3N(99.9%), 3N5(99.95%), 4N(99.99%).