Description of 3N5 MoO3 Molybdenum Oxide Sputtering Target

3N5 MoO3 Molybdenum Oxide Sputtering Target is designed for customers who need reliable oxide materials with consistent composition and stable sputtering performance. Made from molybdenum oxide with 99.95% purity, it provides a dependable source material for thin-film deposition in semiconductor research, optical coatings, electronic devices, and advanced material applications. In practical sputtering processes, target quality directly affects film uniformity, deposition stability, and production efficiency. This MoO3 sputtering target is manufactured with controlled purity, uniform structure, and strict quality inspection to help minimize process fluctuations and improve repeatability. Its stable material characteristics make it suitable for applications where precise oxide film formation is required. Unlike standard targets that focus only on purity specifications, the 3N5 MoO3 Molybdenum Oxide Sputtering Target is developed with real application needs in mind, including process consistency, equipment compatibility, and long-term reliability. Customized sizes and configurations are available to meet different sputtering systems and research requirements. With dependable material quality and flexible customization options, it offers a practical solution for engineers and researchers working on next-generation thin-film technologies and functional oxide materials.

Basic Characteristics of 3N5 MoO3 Molybdenum Oxide Sputtering Target

Chemical Composition: MoO₃; molecular weight 143.94 (or 143.958).

Key Parameters: Melting point 795°C; boiling point 1155°C (sublimation); theoretical density approx. 4.69 g/cm³; relative density typically ≥98.5%.

Electrical Properties: A wide-bandgap semiconductor material with a bandgap of approx. 3.0 eV; MoO₃ targets are electrically insulating, generally requiring RF or RF-R power sources for sputtering.

Microstructure: Orthorhombic layered structure exhibiting structural anisotropy, which underpins its diverse functional properties.

Applications of 3N5 MoO3 Molybdenum Oxide Sputtering Target

1. OLEDs and Display Devices: Used as a hole injection layer (HIL) material, leveraging its high work function (approx. 5.3 eV) to enhance device efficiency; also serves as an anti-reflective layer for TFT metallization to reduce ambient light reflection and improve contrast.

2. Thin-Film Solar Cells: Employed as a hole-selective contact layer in perovskite solar cells to minimize recombination losses; functions as a back contact and blocking layer component in CIGS/CdTe cells.

3. Electrochromism and Smart Windows: Utilizes electrochromic properties (efficiency >150 cm²/C) as a dimming layer in smart windows, enabling the modulation of visible light transmittance (range approx. 15%–80%).

4. Scientific Research and Emerging Fields: Includes applications such as resistive switching layers in memristors, sensing layers for gas sensors, photocatalytic decomposition, and research into electrode materials for lithium-ion batteries. ‌‌

Specifications of 3N5 MoO3 Molybdenum Oxide Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 3N5 (99.95%)