Description of 3N5 CoOx Cobalt Oxide Sputtering Target

Our 3N5 CoOx Cobalt Oxide Sputtering Target addresses common challenges for oxide thin-film deposition. Many standard cobalt oxide targets suffer from poor homogeneity and oxygen imbalance, leading to unstable film stoichiometry, particle contamination, and inconsistent results across your R&D samples. We use high-purity raw powder and precision sintering processes to achieve uniform density and controlled oxygen content throughout the target body. This minimizes oxygen loss and particulate generation during sputtering. It works well for fabricating catalytic coatings, magnetic oxide films, and semiconductor functional layers. Every target undergoes composition and surface quality inspection before delivery. Standard sizes are available, and backing plate bonding can be provided for stable chamber operation. Custom dimensions are also offered to match your PVD setup. Reduce wasted substrates caused by fluctuating oxide properties, so you can focus your lab work on collecting repeatable electrical and catalytic performance data for your research projects. 

Preparation Process of 3N5 CoOx Cobalt Oxide Sputtering Target

The purification is mainly carried out through processes such as vacuum consumable melting (VAR) and electron beam melting (EB), and then prepared through precision forging, rolling, and clean machine processing.

High-purity cobalt oxide target materials can also be prepared by the SPS sintering process, which can achieve high density (≥ 98%) and controllable grain size. ‌‌

Features of 3N5 CoOx Cobalt Oxide Sputtering Target

1. 3N5 cobalt oxide for thin films  

2. High‑purity CoOx sputter target  

3. Dense ceramic for stable deposition  

4. Ideal for battery and catalyst studies  

5. Excellent electrochemical performance for energy  

6. Custom sizes for R&D systems  

7. Low impurity for consistent results  

8. Suitable for RF magnetron sputtering  

9. Supplied with a composition certificate 

10. Vacuum‑sealed for oxidation protection

Applications of 3N5 CoOx Cobalt Oxide Sputtering Target

Semiconductor Coating: Used in Physical Vapor Deposition (PVD) and magnetron sputtering processes to fabricate functional cobalt oxide thin films.

Resistive RAM (ReRAM): Research indicates that high-performance ReRAM devices can be fabricated by tuning the phase structures of CoO and Co3O4 through post-annealing; CoO thin films, in particular, exhibit superior resistive switching characteristics.

Magnetic Storage and New Energy: Cobalt oxide targets are also utilized in coating processes for magnetic storage media and new energy applications.

Optical and Electronic Devices: Suitable for the fabrication of thin films for optical applications, capacitor dielectric layers, gate dielectrics, and other electronic components.

Specifications of 3N5 CoOx Cobalt Oxide Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 3N5 (99.95%)

⚠️  Precautions

Cobalt oxide belongs to magnetic material targets, and it is recommended to control the thickness within 1- 2 mm, preferably not exceeding 4mm, to avoid magnetic interference during sputtering.

When purchasing, it is recommended to confirm parameters such as purity, size, and binding of the back target, and verify supplier qualifications and product testing reports. ‌‌