Description of Co54Mn24Ga22 at% 3N5 Target

Our 3N5 Co54Mn24Ga22 at% sputter target solves typical pain points for Heusler alloy depositions. Many comparable targets suffer from elemental segregation and gallium volatility, creating compositional deviation that ruins the magnetic properties of your thin‑film samples and yields inconsistent experimental results. Advanced melting and homogenising heat‑treatment lock the precise atomic ratio throughout the target bulk, with tightly controlled residual impurities. The uniform microstructure limits preferential sputtering effects, helping you achieve stable, repeatable Heusler‑phase films for spintronics device prototyping and fundamental magnetic research. Each target passes strict composition and purity validation before delivery. Standard dimensions are in stock, and backing‑plate bonding service simplifies chamber mounting. Custom shapes and sizes can be manufactured for non‑standard lab setups. Cut down costly trial‑and‑error cycles triggered by off‑ratio alloy layers, and dedicate more lab time to progressing your core material‑development projects. 

Features of Co54Mn24Ga22 at% 3N5 Target

1. Co54Mn24Ga22 for magnetic shape memory  

2. 3N5 purity for Heusler alloy films

3. Excellent ferromagnetic shape memory effect  

4. Ideal for spintronic and actuator devices  

5. Dense target for uniform sputter deposition  

6. Custom sizes for R&D and pilot production  

7. Low impurity for reproducible thin-film results  

8. Suitable for RF and DC magnetron systems  

9. Supplied with detailed composition certificate  

10. Vacuum-sealed for contamination-free handling

Applications of Co54Mn24Ga22 at% 3N5 Target

Magnetic storage and magneto-electric thin films: Co Mn Ga alloy belongs to the Heusler alloy family, which is often studied for spintronics, magneto-resistive devices, and magnetic storage media. The CoMnGa system has research value in fields such as magnetic sensing and magnetic random access memory due to its high spin polarization.

Semiconductor and new energy coating: 3N5 pure cobalt-based target material is suitable for semiconductor, magnetic storage, and new energy production lines. The deposited magnetic and conductive films have strong adhesion, good density, and high stability.

Specifications of Co54Mn24Ga22 at% 3N5 Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 3N5(99.95%).

⚠️  Precautions for Use

Thickness selection: Cobalt-based target materials belong to magnetic materials, and the magnetic field on the target surface will interfere with the magnetic field distribution of magnetron sputtering during sputtering. It is recommended to control the thickness within 1- 2 mm, preferably not exceeding 4mm; otherwise, it may affect the sputtering rate and film uniformity.

Customization requirements: The composition ratio and size specifications of alloy target materials can usually be customized according to customer needs.