Description of Co50Fe50 at% 3N5 Sputtering Target

Our 3N5 Co50Fe50 at% sputtering target is engineered to resolve a key pain point for alloy sputtering: compositional deviation caused by poor material homogeneity, which leads to unreliable magnetic‑film properties and inconsistent experimental data. Adopting advanced alloy preparation techniques, this target maintains a strict 50:50 atomic percentage throughout the whole body with low residual impurities. Uniform microstructure suppresses element segregation during deposition, helping you obtain repeatable magnetic performance across sample batches. It fits perfectly for spintronics research, magnetic sensor prototyping, and related lab‑scale material investigations. Each finished target passes strict composition and purity inspection to guarantee your test results remain comparable. Standard dimensions are in stock, and backing‑plate bonding service supports easy chamber mounting. Custom shapes and sizes are available for non‑standard setups. Stop wasting lab resources on drifted alloy films; use this well‑balanced CoFe target to reduce trial‑and‑error and push your R&D work forward steadily. 

Preparation Process of Co50Fe50 at% 3N5 Sputtering Target

The commonly used process is vacuum melting+hot pressing/hot isostatic pressing to ensure uniform composition and low impurity content. Some sources also mention the use of vacuum consumable melting (VAR)+electron beam (EB) refining+precision forging/rolling+clean machine processing, which can achieve a density of over 99.8%. ‌‌

Features of Co50Fe50 at% 3N5 Sputtering Target

1. Co50Fe50 alloy for magnetic films 

2. 3N5 purity for consistent performance  

3. Excellent soft magnetic properties  

4. Ideal for read/write head coatings  

5. Dense target for uniform sputtering  

6. Custom sizes for R&D systems  

7. Low impurity for device-grade quality

8. Suitable for DC and RF magnetron  

9. Supplied with a composition certificate  

10. Vacuum-sealed for contamination protection

Applications of Co50Fe50 at% 3N5 Sputtering Target

Magnetic recording and storage: hard disk drive (HDD) read-write heads, giant magnetoresistance (GMR)/tunneling magnetoresistance (TMR) devices, magnetic random access memory (MRAM) core layer.

Spintronics and sensors: magnetic sensors, spin logic devices, thin film magnetic shielding.

Semiconductors and Microelectronics: Metal interconnect layers, contact layers, or barrier layers in integrated circuits to reduce resistance and power consumption.

Aerospace and special devices: micro special motors, electromagnets, relays, etc., utilizing high saturation magnetic flux density to achieve lightweight and miniaturized design. ‌‌

Specifications of Co50Fe50 at% 3N5 Sputtering Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 3N5(99.95%).

⚠️  Precautions

Compared to iron nickel (FeNi) alloys, cobalt iron alloys have poorer processing performance, are prone to oxidation, have higher high-frequency losses, and are also more expensive.

To further optimize magnetic properties, reduce coercivity, or enhance thermal stability, elements such as tantalum (Ta), boron (B), and zirconium (Zr) can be added to form improved alloys such as CoFeTa and CoFeB. ‌‌