Description of 99.95% Pure Co54Mn24Ga22 at% 3N5 Target

Our 99.95% Pure Co54Mn24Ga22 at% 3N5 sputter target addresses persistent challenges when depositing Heusler alloy thin‑films. Gallium’s high volatility and uneven alloy grain structure frequently trigger stoichiometry drift, which distorts magnetic performance and generates inconsistent experimental data that wastes valuable lab resources. Specialised melting and long‑term homogenisation treatment lock in the precise atomic ratio across the entire target bulk, while strict raw‑material screening keeps impurity levels well‑controlled. Optimised microstructure suppresses element segregation during sputtering, delivering stable and repeatable Heusler‑phase films for spintronics prototyping and fundamental magnetic research. Every finished target undergoes rigorous composition and purity testing before shipment. Standard sizes are available, with backing‑plate bonding offered for easy chamber installation. Custom geometries can also be produced for non‑standard lab hardware. Minimise frustrating trial‑and‑error caused by off‑composition coatings, so you can focus your efforts on advancing your material‑science research objectives. 

Features of 99.95% Pure Co54Mn24Ga22 at% 3N5 Target

1. 99.95% pure CoMnGa Heusler target 

2. 3N5 purity for magnetic thin films 

3. Excellent shape memory effect for actuators  

4. Ideal for spintronic device applications  

5. Dense target for uniform sputter deposition  

6. Custom dimensions for R&D systems  

7. Low impurity for reproducible research results  

8. Suitable for RF and DC magnetron sputtering  

9. Supplied with composition analysis certificate  

10. Vacuum-sealed for contamination-free handling

Applications of 99.95% Pure Co54Mn24Ga22 at% 3N5 Target

Magnetic storage and magneto-electric thin films: Co Mn Ga alloy belongs to the Heusler alloy family, which is often studied for spintronics, magneto-resistive devices, and magnetic storage media. The CoMnGa system has research value in fields such as magnetic sensing and magnetic random access memory due to its high spin polarization.

Semiconductor and new energy coating: 3N5 pure cobalt-based target material is suitable for semiconductor, magnetic storage, and new energy production lines. The deposited magnetic and conductive films have strong adhesion, good density, and high stability.

Specifications of 99.95% Pure Co54Mn24Ga22 at% 3N5 Target

Circular Sputtering Targets(Diameter): 1.0”2.0”3.0”4.0”5.0”6.0” up to 21”

Rectangular Sputtering Targets(Width x Length): 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20”

Thickness: 0.125”,   0.25”

Shape: Disc/Rectangular

Bonding: Unbonding/Bonding

Purity: 3N5(99.95%).