Description of 99.8% Pure Mn45Te55 at% Manganese Telluride Sputter Target

99.8% Pure Mn45Te55 at% Manganese Telluride Sputter Target is designed for researchers and device developers who need accurate composition and consistent sputtering performance. With 99.8% purity and a controlled atomic ratio of 45% manganese to 55% tellurium, it provides a reliable material source for MnTe thin-film deposition and advanced materials research. In manganese telluride film development, composition control matters because even small variations can affect the structure, electrical behavior, and other functional properties of the deposited film. This sputter target is manufactured with controlled composition and uniform material quality to help reduce material-related variables and improve deposition repeatability. The target is suitable for magnetron sputtering and other PVD processes used in thin-film research, semiconductor development, magnetic materials, and emerging electronic applications. Its consistent composition makes it easier for researchers to compare experimental results and fine-tune deposition parameters without introducing unnecessary changes in the target material. Available in customized sizes and configurations, 99.8% Pure Mn45Te55 at% Manganese Telluride Sputter Target can be tailored to different sputtering equipment and experimental requirements. It offers a practical choice for customers who value composition accuracy, process control, and dependable material quality.

Features of 99.8% Pure Mn45Te55 at% Manganese Telluride Sputter Target

1. Precise 45:55 atomic ratio — Controlled Mn/Te composition supports more consistent film composition and experimental results.

2. 99.8% high purity — Helps reduce unwanted impurities and minimize material-related variables during thin-film deposition.

3. Stable sputtering performance — Supports repeatable deposition and more consistent process control.

4. Suitable for advanced research — Ideal for MnTe thin films, magnetic materials, semiconductor research, and emerging electronic applications.

5. Customizable specifications — Target dimensions and configurations can be tailored to different sputtering systems and research requirements.

Applications of 99.8% Pure Mn45Te55 at% Manganese Telluride Sputter Target

1. Research on magnetic thin films: The MnTe system can be used to prepare antiferromagnetic thin films, which, when combined with ferromagnetic layers, form exchange bias structures and are candidate materials for spintronics devices.

2. Exploration of thermoelectric thin films: Telluride systems (such as Bi ₂ Te ∝) are classic thermoelectric materials, and MnTe also has thermoelectric potential and is suitable for verifying the thermoelectric properties of thin films.

3. Semiconductor doping and functional thin films: The manganese element can be used to prepare magnetoresistance effect films (GMR/TMR) and semiconductor-doped films. ‌‌

Specifications of 99.8% Pure Mn45Te55 at% Manganese Telluride Sputter Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 2N8 (99.8%)