Description of 2N8 Mn45Te55 at% Sputtering Target

2N8 Mn45Te55 at% Sputtering Target is developed for researchers and manufacturers who require precise alloy composition, stable sputtering behavior, and consistent thin-film performance. With a controlled atomic ratio of 45% manganese and 55% tellurium, this target provides a reliable material source for advanced thin-film deposition, semiconductor research, and emerging functional material applications. In specialized material development, small composition differences can significantly influence film properties and device performance. This MnTe sputtering target is produced with strict composition control and uniform material quality to help minimize process variations and improve deposition repeatability. Its stable characteristics make it suitable for applications where accurate stoichiometry and dependable sputtering results are essential. Rather than offering a standard material solution only, 2N8 Mn45Te55 at% Sputtering Target focuses on meeting practical research and production needs, including customized dimensions, consistent quality, and reliable integration with different sputtering systems. It provides engineers and researchers with a trustworthy option for exploring manganese telluride-based films and advanced electronic materials while maintaining better control over the deposition process.

Features of 2N8 Mn45Te55 at% Sputtering Target

✅ Precise composition and purity control

✅ Alloy microstructure and sputtering performance

✅ Intrinsic functional material properties

✅ Application-specific suitability and industrial mass production capabilities

Applications of 2N8 Mn45Te55 at% Sputtering Target

It is mainly used for magnetron sputtering coating and can deposit manganese tellurium (MnTe) thin films. This type of material has application potential in the fields of thermoelectricity, spin electronics, infrared optics, and other fields. Magnetron sputtering is a high-speed and low-temperature coating method suitable for preparing uniform and dense films on plastics, glass, semiconductors, and other substrates.

Specifications of 2N8 Mn45Te55 at% Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 2N8 (99.8%)