Description of InGaZnO4 Indium Gallium Zinc Oxide IGZO Sputtering Target

InGaZnO4 Indium Gallium Zinc Oxide IGZO Sputtering Target is a high-performance coating material developed for advanced thin-film applications, especially in TFT display manufacturing, semiconductor technologies, and next-generation electronic devices. With carefully controlled composition and high material purity, it enables stable sputtering processes and consistent film quality for demanding production environments. Unlike standard sputtering targets that only focus on basic specifications, our IGZO targets are manufactured with attention to the details that directly affect your process, including composition uniformity, density, surface quality, and target customization. These factors help minimize deposition fluctuations, improve coating consistency, and reduce unnecessary adjustments during production. We provide InGaZnO4 IGZO Sputtering Targets in customized sizes and configurations to match different equipment requirements and application needs. Whether for research projects, pilot production, or industrial-scale manufacturing, our goal is to deliver a reliable target solution that supports smoother processing and predictable results. By combining technical precision with flexible service, we help customers overcome material selection challenges and achieve better performance in advanced thin-film coating applications.

Features of InGaZnO4 Indium Gallium Zinc Oxide IGZO Sputtering Target

High electron mobility: Approximately 20–30 times that of amorphous silicon, effectively enhancing TFT response speeds and supporting high-resolution, high-refresh-rate displays.

Low leakage current and low power consumption: Suitable for energy-efficient display devices and portable electronics.

Excellent optical transparency: High visible light transmittance, making it ideal for high-brightness display applications.

Low-temperature film formation compatibility: Films can be fabricated at lower temperatures, making the material compatible with processes such as flexible display manufacturing.

Applications of InGaZnO4 Indium Gallium Zinc Oxide IGZO Sputtering Target

LCD/OLED panels: Used for TFT backplanes in TFT-LCD and AMOLED/OLED display panels, supporting high-resolution and high-refresh-rate screens.

Mobile devices: Optimizes display performance and battery life for smartphones and tablets; IGZO’s low leakage characteristics help conserve power.

Flexible displays: Low-temperature processing allows deposition onto flexible substrates like plastic or polyimide, enabling flexible screens, e-readers, smartwatches, and other wearable devices.

Low-power devices: Suitable for power-sensitive products such as e-readers, AR/VR headsets, IoT terminals, and smart home control panels.

3D stacking and monolithic integration: Used for in-memory computing and increased circuit density by placing high-density memory close to logic circuits, thereby reducing power consumption associated with data movement.

DRAM cells: Samsung has implemented vertical IGZO DRAM cells (1T1C structure), leveraging IGZO’s extremely low leakage characteristics.

Advanced transistor structures: Used in stacked nanosheet devices, vertical dual-gate transistors, and more; combined with processes like ALD to achieve smaller device dimensions.

Sensors: Used in photodetectors, pressure sensors, pH sensors, gas sensors, etc.

Memristors: Show promise for application in next-generation memory devices.

Scientific research: Compositional tuning (e.g., IGZTO, IGGXO) continues to push performance boundaries, such as enhancing mobility and optimizing transmittance. 

Specifications of InGaZnO4 Indium Gallium Zinc Oxide IGZO Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 4N(99.99%)

Key Aspects of the Sputtering Process

IGZO is highly sensitive to sputtering power, with an optimal power density range that is relatively narrow (1.5–3.5 W/cm²); operating outside this range leads to a sharp deterioration in the stability of the thin-film threshold voltage and the subthreshold swing. During sputtering, secondary phases within the target (such as ZnGa₂O₄) can form a coating layer with poor conductivity, ultimately causing "target poisoning"; therefore, the design of single-phase, high-density targets is crucial for extending service life.