Description of InGaZnO4(IGZO)  Sputtering Target with Centre Hole

InGaZnO4(IGZO) Sputtering Target with Centre Hole is a specialized coating material designed for advanced thin-film deposition processes where precise geometry, stable performance, and consistent film quality are essential. Commonly used in TFT displays, semiconductor devices, and electronic coating applications, this IGZO target combines the advantages of controlled composition with a practical structure optimized for specific sputtering equipment. The centre hole design is developed to meet unique mounting and processing requirements, helping improve target installation compatibility and reduce unnecessary modifications during equipment setup. Manufactured with attention to material uniformity, density, and surface quality, our IGZO sputtering targets support reliable deposition results and repeatable production performance. We understand that every sputtering system and application has different demands. Therefore, we offer customized dimensions, hole positions, and specifications to better match customer equipment and process conditions. Instead of providing a standard product that may require additional adjustments, we focus on delivering a target solution that fits your actual manufacturing needs. With precise engineering and flexible customization, our InGaZnO4(IGZO) Sputtering Target with Centre Hole helps customers achieve smoother operations, improved efficiency, and dependable thin-film coating performance.

Primary Functions of the Center Hole Design

Improving magnetic field distribution and plasma confinement: Magnetron sputtering generates a magnetic field using magnets placed behind the target, confining electrons near the target surface to enhance ionization efficiency. The center hole design may work in conjunction with the spatial distribution of the magnetic field to optimize plasma uniformity across the target surface, thereby improving the uniformity of thin-film deposition.

Increasing target material utilization: During the sputtering process with conventional planar targets, uneven erosion grooves tend to form on the target surface, resulting in low material utilization. As a structural feature, the center hole may help redistribute electric or magnetic fields, promoting more uniform target erosion and extending the target's service life.

Compatibility with specific sputtering equipment: Certain sputtering systems or processes (such as hollow cathode target designs) utilize hollow structures to increase the effective sputtering area or alter the plasma state. The center hole may be incorporated to meet the requirements of such specialized equipment or processes.

Applications of InGaZnO4(IGZO)  Sputtering Target with Centre Hole

Amorphous IGZO thin films formed via magnetron sputtering deposition serve as a key channel layer material for display panels such as TFT-LCDs and AMOLEDs.

Specifications of InGaZnO4(IGZO)  Sputtering Target with Centre Hole

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 4N(99.99%)