3N ZrO2 8YSZ Sputtering Target
3N ZrO2 8YSZ Sputtering Target
3N ZrO2 8YSZ Sputtering Target
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3N ZrO2 8YSZ Sputtering Target

Description of 3N ZrO2 8YSZ Sputtering Target

3N ZrO2 8YSZ Sputtering Target is designed for customers who require stable zirconia-based materials with controlled composition and reliable thin-film performance. Made from zirconium oxide stabilized with 8 mol% yttria, this target provides a dependable material source for applications including solid oxide fuel cells, thermal barrier coatings, oxygen sensors, and advanced ceramic films. In high-performance ceramic applications, material consistency plays a key role in achieving predictable electrical, thermal, and mechanical properties. This 8YSZ sputtering target is manufactured with controlled composition, uniform structure, and strict quality inspection to help reduce process variations and improve deposition repeatability. Rather than focusing only on standard specifications, the 3N ZrO2 8YSZ Sputtering Target is developed to address practical challenges faced by researchers and manufacturers, such as stable sputtering behavior, equipment compatibility, and consistent film formation. Its excellent ionic conductivity and thermal stability make it a valuable choice for next-generation energy and ceramic coating technologies. Available in customized sizes and configurations, this zirconia sputtering target can be tailored to different sputtering systems and project requirements. It provides a reliable solution for customers seeking better control, stable performance, and efficient development of advanced functional ceramic films.

Features of 3N ZrO2 8YSZ Sputtering Target

Composition and Purity: ZrO₂ doped with 8 mol% Y₂O₃; 3N purity (main component content ≥99.9%), with strict limits on impurity elements (e.g., Fe, Si, Al).

Physical Properties: Density typically ranges from 3.5 to 4.2 g/cm³ (reaching up to 5.85 g/cm³ for some products); melting point is approximately 2700°C; appearance is a white or off-white ceramic body.

Crystal Structure: Predominantly tetragonal or cubic phases; average grain size is generally required to be ≤10 μm to ensure stability during the sputtering process.

Micro-uniformity: Composition remains uniform after thin-film deposition; XPS analysis confirms that the film composition matches that of the target material (8YSZ).

Applications of 3N ZrO2 8YSZ Sputtering Target

Thermal barrier coating‌: 8YSZ is a ceramic layer material with the best comprehensive performance in service environments below 1200°C. It is widely used for thermal protection of hot-end components of aerospace engines and gas turbines.

‌Electronics and Semiconductors‌: As a buffer layer material for the growth of functional oxide films on silicon-based substrates, it is used in semiconductor chip manufacturing.

‌Functional thin film preparation‌: Preparation of yttria-stabilized zirconia thin films through magnetron sputtering for use in solid oxide fuel cell electrolyte layers, optical coatings, etc.

Specifications of 3N ZrO2 8YSZ Sputtering Target

Circular Sputtering Targets (Diameter): 1.0”, 2.0”, 3.0”, 4.0”, 5.0”, 6.0”, up to 12”

Rectangular Sputtering Targets (Width x Length): 5” x 12”, 5” x 15”, 5” x 20”, 5” x 22”, 6” x 20”

Thickness: 0.125”, 0.25”

Shape: Disc/Rectangular

Bonding: Unbonded/Bonded

Purity: 3N(99.9%)

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